SI2366DS-T1-GE3

Symbol Micros: TSI2366ds

127588

TSI2366ds

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 5.8A 30V 2.1W 0.036Ω

Parameters

Open channel resistance:	36mOhm
Max. drain current:	5,8A
Max. power loss:	2,1W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2366DS-T1-GE3 Case style: SOT23  

External warehouse:

9000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1149

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	36mOhm
Max. drain current:	5,8A
Max. power loss:	2,1W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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