SI2369DS

Symbol Micros: TSI2369ds

200406

TSI2369ds

Contractor Symbol:

Case : SOT23

Datasheet

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Trans MOSFET P-CH 30V 5.4A 3-Pin SOT-23 SI2369DS-T1-GE3; SI2369DS-T1;

Parameters

Open channel resistance:	40mOhm
Max. drain current:	5,4A
Max. power loss:	1,25W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	40mOhm
Max. drain current:	5,4A
Max. power loss:	1,25W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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