SI2369DS

Symbol Micros: TSI2369ds
Contractor Symbol:
Case : SOT23
Trans MOSFET P-CH 30V 5.4A 3-Pin SOT-23 SI2369DS-T1-GE3; SI2369DS-T1;
Parameters
Open channel resistance: 40mOhm
Max. drain current: 5,4A
Max. power loss: 1,25W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2369DS-T1-GE3 Case style: SOT23  
External warehouse:
51000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1377
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2369DS-T1-GE3 Case style: SOT23  
External warehouse:
15000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1434
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2369DS-T1-GE3 Case style: SOT23  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1436
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 40mOhm
Max. drain current: 5,4A
Max. power loss: 1,25W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD