SI2374DS-T1-GE3

Symbol Micros: TSI2374ds
Contractor Symbol:
Case : SOT23-3
N-MOSFET 5.9A 20V 1.7W 0.030Ω
Parameters
Open channel resistance: 41mOhm
Max. drain current: 5,9A
Max. power loss: 1,7W
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2374DS-T1-GE3 Pbf F5. Case style: SOT23-3 t/r Datasheet
In stock:
5 pcs.
Quantity of pcs. 2+ 5+ 20+ 100+ 400+
Net price (EUR) 0,8270 0,6156 0,4558 0,3830 0,3595
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Packaging:
5
Manufacturer:: Vishay Manufacturer part number: SI2374DS-T1-GE3 Case style: SOT23-3  
External warehouse:
24000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3595
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2374DS-T1-GE3 Case style: SOT23-3  
External warehouse:
9000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3595
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 41mOhm
Max. drain current: 5,9A
Max. power loss: 1,7W
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD