SI2374DS-T1-GE3

Symbol Micros: TSI2374ds

109798

TSI2374ds

Contractor Symbol:

Case : SOT23-3

Datasheet

Technical drawing Add to favourites

N-MOSFET 5.9A 20V 1.7W 0.030Ω

Parameters

Open channel resistance:	41mOhm
Max. drain current:	5,9A
Max. power loss:	1,7W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2374DS-T1-GE3 Pbf F5. Case style: SOT23-3 t/r Datasheet

In stock:

5 pcs.

Quantity of pcs.	2+	5+	20+	100+	400+
Net price (EUR)	0,8360	0,6222	0,4607	0,3871	0,3634

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Packaging:
5 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	41mOhm
Max. drain current:	5,9A
Max. power loss:	1,7W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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