SI2374DS-T1-GE3

Symbol Micros: TSI2374ds

109798

TSI2374ds

Contractor Symbol:

Case : SOT23-3

Datasheet

Technical drawing Add to favourites

N-MOSFET 5.9A 20V 1.7W 0.030Ω

Parameters

Open channel resistance:	41mOhm
Max. drain current:	5,9A
Max. power loss:	1,7W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2374DS-T1-GE3 Pbf F5. Case style: SOT23-3 t/r Datasheet

In stock:

5 pcs.

Quantity of pcs.	2+	5+	20+	100+	400+
Net price (EUR)	0,8282	0,6165	0,4565	0,3835	0,3600

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Packaging:
5 Quantity (multiple: 1)

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Manufacturer:: Vishay Manufacturer part number: SI2374DS-T1-GE3 Case style: SOT23-3  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,3600

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	41mOhm
Max. drain current:	5,9A
Max. power loss:	1,7W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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