LGE3415ES
Symbol Micros:
TSI3415B-TP LGE
Case : SOT23
P-CHANNEL MOSFET, SOT-23 Substitute: SI3415B-TP;
Parameters
| Open channel resistance: | 50mOhm |
| Max. drain current: | -4A |
| Max. power loss: | 1,4W |
| Case: | SOT23 |
| Manufacturer: | LGE |
| Max. drain-source voltage: | -20V |
| Transistor type: | P-MOSFET |
| Open channel resistance: | 50mOhm |
| Max. drain current: | -4A |
| Max. power loss: | 1,4W |
| Case: | SOT23 |
| Manufacturer: | LGE |
| Max. drain-source voltage: | -20V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 10V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols