SI3433CDV-T1-E3 VISHAY

Symbol Micros: TSI3433cdv

200419

TSI3433cdv

Contractor Symbol:

Case : TSOP06

Datasheet

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Transistor P-Channel MOSFET; 20V; 8V; 60mOhm; 6A; 3,3W; -55°C ~ 150°C; Equivalent: SI3433CDV-T1-E3; SI3433CDV-T1-GE3; SI3433CDV-T1-BE3;

Parameters

Open channel resistance:	60mOhm
Max. drain current:	6A
Max. power loss:	3,3W
Case:	TSOP6
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V

All parameters

Manufacturer:: Vishay Manufacturer part number: SI3433CDV-T1-GE3 RoHS Case style: TSOP06 t/r Datasheet

In stock:

580 pcs.

Quantity of pcs.	3+	10+	50+	250+	1160+
Net price (EUR)	0,2935	0,1872	0,1315	0,1128	0,1066

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Packaging:
1160 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	60mOhm
Max. drain current:	6A
Max. power loss:	3,3W
Case:	TSOP6
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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