SI3440DV-T1-GE3

Symbol Micros: TSI3440dv

123767

TSI3440dv

Contractor Symbol:

Case : TSOP06

Datasheet

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Transistor N-MOSFET; 150V; 20V; 400mOhm; 1,2A; 1,14W; -55°C ~ 150°C; OBSOLETE; SI3440DV-T1-GE3; SI3440DV-T1-E3;

Parameters

Open channel resistance:	400mOhm
Max. drain current:	1,2A
Max. power loss:	1,14W
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	150V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	400mOhm
Max. drain current:	1,2A
Max. power loss:	1,14W
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	150V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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