SI3441BDV-T1-E3 Vishay

Symbol Micros: TSI3441bdv

106162

TSI3441bdv

Contractor Symbol:

Case : TSOP06

Datasheet

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P-MOSFET 20V 2.45A 90mΩ 860mW obsolete

Parameters

Open channel resistance:	130mOhm
Max. drain current:	2,45A
Max. power loss:	860mW
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI3441BDV-T1-E3 Pbf B1... Case style: TSOP06 t/r Datasheet

In stock:

180 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4088	0,2678	0,1920	0,1680	0,1574

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	130mOhm
Max. drain current:	2,45A
Max. power loss:	860mW
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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