SI3459BDV-T1-E3

Symbol Micros: TSI3459bdv

120622

TSI3459bdv

Contractor Symbol:

Case : TSOP06

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 288mOhm; 2,9A; 3,3W; -55°C ~ 150°C;

Parameters

Open channel resistance:	288mOhm
Max. drain current:	2,9A
Max. power loss:	3,3W
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI3459BDV-T1-GE3 RoHS AS.. Case style: TSOP06 t/r  

In stock:

50 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7936	0,5024	0,3968	0,3616	0,3451

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	288mOhm
Max. drain current:	2,9A
Max. power loss:	3,3W
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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