SI3483DDV-T1-GE3 

Symbol Micros: TSI3483DDV-T1-GE3

395326

TSI3483DDV-T1-GE3

Contractor Symbol:

Case : TSOP06

Datasheet

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P-CHANNEL 30-V (D-S) MOSFET TSOP Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	0,0513Ohm
Max. drain current:	6,4A
Max. power loss:	2W
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI3483DDV-T1-GE3 Case style: TSOP06  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1233

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	0,0513Ohm
Max. drain current:	6,4A
Max. power loss:	2W
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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