SI3586DV-T1-E3 Vishay

Symbol Micros: TSI3586dv

106373

TSI3586dv

Contractor Symbol:

Case : TSOP06

Datasheet

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N/P-MOSFET; 20V; 8V; 100mOhm/220mOhm; 2,9A/2,1A; 830mW; -55°C ~ 150°C;

Parameters

Open channel resistance:	220mOhm
Max. drain current:	2,9A
Max. power loss:	830mW
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N/P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI3586DV-T1-E3 RoHS Case style: TSOP06 t/r Datasheet

In stock:

40 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7236	0,4534	0,3783	0,3360	0,3148

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	220mOhm
Max. drain current:	2,9A
Max. power loss:	830mW
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N/P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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