SI3586DV-T1-E3 Vishay
Symbol Micros:
TSI3586dv
Case : TSOP06
N/P-MOSFET; 20V; 8V; 100mOhm/220mOhm; 2,9A/2,1A; 830mW; -55°C ~ 150°C;
Parameters
| Open channel resistance: | 220mOhm |
| Max. drain current: | 2,9A |
| Max. power loss: | 830mW |
| Case: | TSOP06 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 20V |
| Transistor type: | N/P-MOSFET |
| Open channel resistance: | 220mOhm |
| Max. drain current: | 2,9A |
| Max. power loss: | 830mW |
| Case: | TSOP06 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 20V |
| Transistor type: | N/P-MOSFET |
| Max. gate-source Voltage: | 8V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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