SI4178DY-T1-GE3 Vishay

Symbol Micros: TSI4178dy

102891

TSI4178dy

Contractor Symbol:

Case : SOIC08

Datasheet

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N-MOSFET 30V 12A 21mΩ 5W

Parameters

Open channel resistance:	33mOhm
Max. drain current:	12A
Max. power loss:	5W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI4178DY-T1-GE3 RoHS Case style: SOIC08t/r  

In stock:

30 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,5451	0,3031	0,2396	0,2251	0,2180

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: SI4178DY-T1-GE3 Case style: SOIC08  

External warehouse:

7500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2180

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Vishay Manufacturer part number: SI4178DY-T1-GE3 Case style: SOIC08  

External warehouse:

2500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2180

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Vishay Manufacturer part number: SI4178DY-T1-GE3 Case style: SOIC08  

External warehouse:

1550 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2180

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	33mOhm
Max. drain current:	12A
Max. power loss:	5W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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