SI4401DDY-T1-GE3 Vishay

Symbol Micros: TSI4401ddy

108119

TSI4401ddy

Contractor Symbol:

Case : SOIC08

Datasheet

Technical drawing Add to favourites

P-MOSFET 40V 16.1A 15mΩ 6.3W

Parameters

Open channel resistance:	22mOhm
Max. drain current:	16,1A
Max. power loss:	6,3W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI4401DDY-T1-GE3 RoHS Case style: SOIC08  

In stock:

50 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5839	0,3693	0,2908	0,2654	0,2539

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: Vishay Manufacturer part number: SI4401DDY-T1-GE3 Case style: SOIC08  

External warehouse:

33500 pcs.

Quantity of pcs.	50+ (Please wait for the order confirmation)
Net price (EUR)	0,4417

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	22mOhm
Max. drain current:	16,1A
Max. power loss:	6,3W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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