SI4431CDY-T1-GE3

Symbol Micros: TSI4431cdy

120785

TSI4431cdy

Contractor Symbol:

Case : SOIC08

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 9A 2.5W 32mΩ

Parameters

Open channel resistance:	49mOhm
Max. drain current:	9A
Max. power loss:	4,2W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI4431CDY-T1-GE3 RoHS Case style: SOIC08t/r  

In stock:

25 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6222	0,3945	0,3099	0,2818	0,2700

Add to comparison tool Add inquiry (RFQ)

Packaging:
50 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	49mOhm
Max. drain current:	9A
Max. power loss:	4,2W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.