SI4431CDY-T1-GE3
Symbol Micros:
TSI4431cdy
Case : SOIC08
P-MOSFET 30V 9A 2.5W 32mΩ
Parameters
| Open channel resistance: | 49mOhm |
| Max. drain current: | 9A |
| Max. power loss: | 4,2W |
| Case: | SOIC08 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Max. gate-source Voltage: | 20V |
Manufacturer:: Siliconix
Manufacturer part number: SI4431CDY-T1-GE3 RoHS
Case style: SOIC08t/r
In stock:
25 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,6141 | 0,3893 | 0,3059 | 0,2781 | 0,2665 |
Manufacturer:: Vishay
Manufacturer part number: SI4431CDY-T1-GE3
Case style: SOIC08
External warehouse:
5000 pcs.
| Quantity of pcs. | 2500+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,2665 |
Manufacturer:: Vishay
Manufacturer part number: SI4431CDY-T1-GE3
Case style: SOIC08
External warehouse:
2500 pcs.
| Quantity of pcs. | 2500+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,2665 |
Manufacturer:: Vishay
Manufacturer part number: SI4431CDY-T1-GE3
Case style: SOIC08
External warehouse:
2400 pcs.
| Quantity of pcs. | 50+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,3579 |
| Open channel resistance: | 49mOhm |
| Max. drain current: | 9A |
| Max. power loss: | 4,2W |
| Case: | SOIC08 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Max. gate-source Voltage: | 20V |
| Transistor type: | P-MOSFET |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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