SI4431CDY-T1-GE3

Symbol Micros: TSI4431cdy

120785

TSI4431cdy

Contractor Symbol:

Case : SOIC08

Datasheet

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P-MOSFET 30V 9A 2.5W 32mΩ

Parameters

Open channel resistance:	49mOhm
Max. drain current:	9A
Max. power loss:	4,2W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI4431CDY-T1-GE3 RoHS Case style: SOIC08t/r  

In stock:

25 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6238	0,3955	0,3107	0,2825	0,2707

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: SI4431CDY-T1-GE3 Case style: SOIC08  

External warehouse:

1600 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2870

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	49mOhm
Max. drain current:	9A
Max. power loss:	4,2W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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