SI4435BDY

Symbol Micros: TSI4435bdy

33988

TSI4435bdy

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Case : SOP08

Datasheet

Technical drawing Add to favourites

P-MOSFET -9.1A -30V 2.5W 0.02Ohm;

Parameters

Open channel resistance:	20mOhm
Max. drain current:	-9,1A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	-30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	20mOhm
Max. drain current:	-9,1A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	-30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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