SI4463BDY

Symbol Micros: TSI4463bdy

37563

TSI4463bdy

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

Transistor P-Channel MOSFET; 20V; 12V; 20mOhm; 9,8A; 1,5W; -55°C ~ 150°C; Equivalent: SI4463BDY-T1-E3; SI4463BDY-T1-GE3;

Parameters

Open channel resistance:	20mOhm
Max. drain current:	9,8A
Max. power loss:	1,5W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI4463BDY-T1-E3 RoHS Case style: SOP08t/r  

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2349	0,9067	0,7272	0,6233	0,5879

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: Siliconix Manufacturer part number: SI4463BDY-T1-E3 RoHS Case style: SOP08t/r  

In stock:

200 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,2349	0,8193	0,6776	0,6115	0,5879

Add to comparison tool Add inquiry (RFQ)

Packaging:
400 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	20mOhm
Max. drain current:	9,8A
Max. power loss:	1,5W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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