SI4463CDY-T1-GE3

Symbol Micros: TSI4463cdy
Contractor Symbol:
Case : SOP08
Transistor P-MOSFET; 20V; 12V; 14mOhm; 18,6A; 5W; -55°C ~ 150°C; Substitute: SI4463CDY-E3; SI4463CDY-T1-E3; SI4463CDY-GE3;
Parameters
Open channel resistance: 14mOhm
Max. drain current: 18,6A
Max. power loss: 5W
Case: SOP08
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: Siliconix Manufacturer part number: SI4463CDY-T1-GE3 RoHS Case style: SOP08t/r  
In stock:
50 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,1512 0,8058 0,6860 0,6273 0,6061
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Packaging:
100
Manufacturer:: Vishay Manufacturer part number: SI4463CDY-T1-GE3 Case style: SOP08  
External warehouse:
100000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6061
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI4463CDY-T1-GE3 Case style: SOP08  
External warehouse:
10000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6061
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI4463CDY-T1-GE3 Case style: SOP08  
External warehouse:
2200 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6061
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 14mOhm
Max. drain current: 18,6A
Max. power loss: 5W
Case: SOP08
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD