SI4463CDY-T1-GE3

Symbol Micros: TSI4463cdy

111396

TSI4463cdy

Contractor Symbol:

Case : SOP08

Datasheet

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Transistor P-MOSFET; 20V; 12V; 14mOhm; 18,6A; 5W; -55°C ~ 150°C; Substitute: SI4463CDY-E3; SI4463CDY-T1-E3; SI4463CDY-GE3;

Parameters

Open channel resistance:	14mOhm
Max. drain current:	18,6A
Max. power loss:	5W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI4463CDY-T1-GE3 RoHS Case style: SOP08t/r  

In stock:

50 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,1492	0,8044	0,6848	0,6262	0,6051

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	14mOhm
Max. drain current:	18,6A
Max. power loss:	5W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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