SI4564DY-T1-GE3 Vishay

Symbol Micros: TSI4564dy
Contractor Symbol:
Case : SOIC08
Transistor N/P-Channel MOSFET; 40V; 20V; 22mOhm; 30A; 5,2W; -55°C~150°C; SI4564DY-VB;
Parameters
Open channel resistance: 22mOhm
Max. drain current: 30A
Max. power loss: 5,2W
Case: SOIC08
Manufacturer: VBsemi
Max. drain-source voltage: 40V
Transistor type: N/P-MOSFET
Manufacturer:: Siliconix Manufacturer part number: SI4564DY-T1-GE3 RoHS Case style: SOIC08t/r  
In stock:
120 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,5188 1,0627 0,9028 0,8276 0,7994
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Packaging:
400
Manufacturer:: Vishay Manufacturer part number: SI4564DY-T1-GE3 Case style: SOIC08  
External warehouse:
2500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7994
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI4564DY-T1-GE3 Case style: SOIC08  
External warehouse:
7500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7994
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 22mOhm
Max. drain current: 30A
Max. power loss: 5,2W
Case: SOIC08
Manufacturer: VBsemi
Max. drain-source voltage: 40V
Transistor type: N/P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD