SI4564DY-T1-GE3 Vishay

Symbol Micros: TSI4564dy
Contractor Symbol:
Case : SOIC08
Transistor N/P-Channel MOSFET; 40V; 20V; 22mOhm; 30A; 5,2W; -55°C~150°C; SI4564DY-VB;
Parameters
Open channel resistance: 22mOhm
Max. drain current: 30A
Max. power loss: 5,2W
Case: SOIC08
Manufacturer: VBsemi
Max. drain-source voltage: 40V
Transistor type: N/P-MOSFET
Manufacturer:: VBsemi Manufacturer part number: SI4564DY RoHS Case style: SOIC08t/r Datasheet
In stock:
0 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,5943 1,1170 0,9478 0,8667 0,8389
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Packaging:
100
Open channel resistance: 22mOhm
Max. drain current: 30A
Max. power loss: 5,2W
Case: SOIC08
Manufacturer: VBsemi
Max. drain-source voltage: 40V
Transistor type: N/P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD