SI4564DY-T1-GE3 Vishay

Symbol Micros: TSI4564dy

125919

TSI4564dy

Contractor Symbol:

Case : SOIC08

Datasheet

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Transistor N/P-Channel MOSFET; 40V; 20V; 22mOhm; 30A; 5,2W; -55°C~150°C; SI4564DY-VB;

Parameters

Open channel resistance:	22mOhm
Max. drain current:	30A
Max. power loss:	5,2W
Case:	SOIC08
Manufacturer:	VBsemi
Max. drain-source voltage:	40V
Transistor type:	N/P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI4564DY-T1-GE3 Case style: SOIC08  

External warehouse:

7500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5213

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	22mOhm
Max. drain current:	30A
Max. power loss:	5,2W
Case:	SOIC08
Manufacturer:	VBsemi
Max. drain-source voltage:	40V
Transistor type:	N/P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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