SI4564DY SOIC8 VBSEMI

Symbol Micros: TSI4564dy VBS
Contractor Symbol:
Case : SOP08
Transistor N/P-Channel MOSFET; 40V; 20V; 12mOhm; 7,6A; 3W; -55°C~150°C; Substitute: SI4564DY-T1-GE3; SI4564DY-VB;
Parameters
Open channel resistance: 12mOhm
Max. drain current: 7,6A
Max. power loss: 3W
Case: SOP08
Manufacturer: VBsemi
Max. drain-source voltage: 40V
Transistor type: N/P-MOSFET
Manufacturer:: VBsemi Manufacturer part number: SI4564DY-VB RoHS Case style: SOP08t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7652 0,4844 0,3814 0,3487 0,3323
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Packaging:
200
Open channel resistance: 12mOhm
Max. drain current: 7,6A
Max. power loss: 3W
Case: SOP08
Manufacturer: VBsemi
Max. drain-source voltage: 40V
Transistor type: N/P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD