SI4564DY SOIC8 VBSEMI

Symbol Micros: TSI4564dy VBS

529835

TSI4564dy VBS

Contractor Symbol:

Case : SOP08

Datasheet

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Transistor N/P-Channel MOSFET; 40V; 20V; 12mOhm; 7,6A; 3W; -55°C~150°C; Substitute: SI4564DY-T1-GE3; SI4564DY-VB;

Parameters

Open channel resistance:	12mOhm
Max. drain current:	7,6A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	VBsemi
Max. drain-source voltage:	40V
Transistor type:	N/P-MOSFET

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• Parameters

Open channel resistance:	12mOhm
Max. drain current:	7,6A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	VBsemi
Max. drain-source voltage:	40V
Transistor type:	N/P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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