SI4800BDY-e3

Symbol Micros: TSI4800bdy-e3

77942

TSI4800bdy-e3

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

N-MOSFET 6.5A 30V 1.3W 0.0185Ω

Parameters

Open channel resistance:	30mOhm
Max. drain current:	6,5A
Max. power loss:	1,3W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI4800BDY-T1-E3 RoHS Case style: SOP08t/r  

In stock:

60 pcs.

Quantity of pcs.	2+	10+	50+	225+	1125+
Net price (EUR)	0,5219	0,3164	0,2432	0,2189	0,2090

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Packaging:
225 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	6,5A
Max. power loss:	1,3W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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