SI4963DY VISHAY

Symbol Micros: TSI4963dy

118492

TSI4963dy

Contractor Symbol:

Case : SOIC08

Datasheet

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2xP-MOSFET 20V 12V ID6.2A obsolete; Substitute: SI4963DY-T1-E3

Parameters

Open channel resistance:	50mOhm
Max. drain current:	4,9A
Max. power loss:	1,1W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	2xP-MOSFET

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• Parameters

Open channel resistance:	50mOhm
Max. drain current:	4,9A
Max. power loss:	1,1W
Case:	SOIC08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	2xP-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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