SI5618-TP 

Symbol Micros: TSI5618-TP

395341

TSI5618-TP

Case : SOT23

Datasheet

Technical drawing Add to Favorites

P-CHANNEL MOSFET, SOT-23 PACKAGE Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	200mOhm
Max. drain current:	1,9A
Max. power loss:	830mW
Case:	SOT23
Manufacturer:	MCC
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

         

 

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• Parameters

Open channel resistance:	200mOhm
Max. drain current:	1,9A
Max. power loss:	830mW
Case:	SOT23
Manufacturer:	MCC
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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