SI6562CDQ-T1-GE3 VISHAY

Symbol Micros: TSI6562cdq

200600

TSI6562cdq

Contractor Symbol:

Case : TSSOP08

Datasheet

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Transistor N/P-Channel MOSFET; 20V; 12V; 22mOhm/30mOhm; 6,7A/6,1A; 1,6W/1,7W; -55°C ~ 150°C;

Parameters

Open channel resistance:	22mOhm
Max. drain current:	6,7A
Max. power loss:	1,6W
Case:	TSSOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V

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• Parameters

Open channel resistance:	22mOhm
Max. drain current:	6,7A
Max. power loss:	1,6W
Case:	TSSOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V
Transistor type:	N/P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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