SI7106DN-T1-E3 PPAK1212

Symbol Micros: TSI7106dn

42918

TSI7106dn

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Case : PPAK1212

Datasheet

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Transistor N-Channel MOSFET; 20V; 12V; 6,2mOhm; 12,5A; 1,5W; -55°C~150°C;

Parameters

Open channel resistance:	6,2mOhm
Max. drain current:	12,5A
Max. power loss:	1,5W
Case:	PPAK1212
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V

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• Parameters

Open channel resistance:	6,2mOhm
Max. drain current:	12,5A
Max. power loss:	1,5W
Case:	PPAK1212
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C

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