SI7115DN-T1-E3 VISHAY

Symbol Micros: TSI7115dn

200618

TSI7115dn

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Transistor P-Channel MOSFET; 150V; 20V; 295mOhm; 8,9A; 52W; -55°C ~ 150°C;

Parameters

Open channel resistance:	295mOhm
Max. drain current:	8,9A
Max. power loss:	52W
Case:	PowerPAK 1212-8
Manufacturer:	VISHAY
Max. drain-source voltage:	150V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	295mOhm
Max. drain current:	8,9A
Max. power loss:	52W
Case:	PowerPAK 1212-8
Manufacturer:	VISHAY
Max. drain-source voltage:	150V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-50°C ~ 150°C
Mounting:	SMD

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