SI7119DN-T1-E3 VISHAY
Symbol Micros:
TSI7119dn
Case :
Transistor P-Channel MOSFET; 200V; 20V; 1,05Ohm; 3,8A; 3,7W; -50°C ~ 150°C;
Parameters
| Open channel resistance: | 1,05mOhm |
| Max. drain current: | 3,8A |
| Max. power loss: | 3,7W |
| Case: | PowerPAK 1212-8 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 200V |
| Max. gate-source Voltage: | 20V |
Manufacturer:: Vishay
Manufacturer part number: SI7119DN-T1-GE3
Case style:
External warehouse:
9000 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,3395 |
Manufacturer:: Vishay
Manufacturer part number: SI7119DN-T1-E3
Case style:
External warehouse:
3000 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,3395 |
| Open channel resistance: | 1,05mOhm |
| Max. drain current: | 3,8A |
| Max. power loss: | 3,7W |
| Case: | PowerPAK 1212-8 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 200V |
| Max. gate-source Voltage: | 20V |
| Transistor type: | P-MOSFET |
| Operating temperature (range): | -50°C ~ 150°C |
| Mounting: | SMD |
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