SI7119DN-T1-E3 VISHAY

Symbol Micros: TSI7119dn
Contractor Symbol:
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Transistor P-Channel MOSFET; 200V; 20V; 1,05Ohm; 3,8A; 3,7W; -50°C ~ 150°C;
Parameters
Open channel resistance: 1,05mOhm
Max. drain current: 3,8A
Max. power loss: 3,7W
Case: PowerPAK 1212-8
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Max. gate-source Voltage: 20V
         
 
Item available on request
Open channel resistance: 1,05mOhm
Max. drain current: 3,8A
Max. power loss: 3,7W
Case: PowerPAK 1212-8
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Max. gate-source Voltage: 20V
Transistor type: P-MOSFET
Operating temperature (range): -50°C ~ 150°C
Mounting: SMD