SI7149ADP-TI-GE3 Vishay

Symbol Micros: TSI7149adp

103864

TSI7149adp

Contractor Symbol:

Case : SO-8

Datasheet

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Tranzystor P-MOSFET; 30V; 25V; 9,5mOhm; 50A; 48W; -55°C ~ 150°C; Odpowiednik: SI7149ADP-TI-E3; SI7149ADP-GE3; SI7149ADP-T1-GE3;

Parameters

Open channel resistance:	9,5mOhm
Max. drain current:	50A
Max. power loss:	48W
Case:	SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI7149ADP-T1-GE3 RoHS Case style: SO-8  

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7858	0,4964	0,3929	0,3576	0,3411

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Packaging:
200 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: SI7149ADP-T1-GE3 Case style: SO-8  

External warehouse:

3900 pcs.

Quantity of pcs.	25+ (Please wait for the order confirmation)
Net price (EUR)	0,3740

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Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	9,5mOhm
Max. drain current:	50A
Max. power loss:	48W
Case:	SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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