SI7149ADP-TI-GE3 Vishay
Symbol Micros:
TSI7149adp
Case : SO-8
P-MOSFET 30V 50A 5.2mΩ 48W
Parameters
| Open channel resistance: | 9,5mOhm |
| Max. drain current: | 50A |
| Max. power loss: | 48W |
| Case: | SO-8 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Transistor type: | P-MOSFET |
Manufacturer:: Vishay
Manufacturer part number: SI7149ADP-T1-GE3 RoHS
Case style: SO-8
Datasheet
In stock:
0 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 300+ | 900+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,7834 | 0,4964 | 0,3905 | 0,3505 | 0,3411 |
Manufacturer:: Vishay
Manufacturer part number: SI7149ADP-T1-GE3
Case style: SO-8
External warehouse:
105000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,2604 |
Manufacturer:: Vishay
Manufacturer part number: SI7149ADP-T1-GE3
Case style: SO-8
External warehouse:
5775 pcs.
| Quantity of pcs. | 25+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,3433 |
| Open channel resistance: | 9,5mOhm |
| Max. drain current: | 50A |
| Max. power loss: | 48W |
| Case: | SO-8 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 25V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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