SI7153DN-T1-GE3 

Symbol Micros: TSI7153DN-T1-GE3

395353

TSI7153DN-T1-GE3

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Datasheet

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Transistor P-Channel MOSFET; 30V; 25V; 15mOhm; 18A; 52W; -55°C ~ 150°C;

Parameters

Open channel resistance:	15mOhm
Max. drain current:	18A
Max. power loss:	52W
Case:	PowerPAK 1212-8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Max. gate-source Voltage:	25V

All parameters

Manufacturer:: Vishay Manufacturer part number: SI7153DN-T1-GE3 Case style:    

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6000 pcs.

Quantity of pcs.	6000+ (Please wait for the order confirmation)
Net price (EUR)	0,2589

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Packaging:
6000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	15mOhm
Max. drain current:	18A
Max. power loss:	52W
Case:	PowerPAK 1212-8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Max. gate-source Voltage:	25V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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