SI7288DP-T1-GE3 VISHAY

Symbol Micros: TSI7288dp

200650

TSI7288dp

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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Trans MOSFET N-CH 40V 10A 8-Pin PowerPAK SO EP

Parameters

Open channel resistance:	22mOhm
Max. drain current:	10A
Max. power loss:	3,6W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	22mOhm
Max. drain current:	10A
Max. power loss:	3,6W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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