SI7431DP-T1-E3

Symbol Micros: TSI7431dp

200670

TSI7431dp

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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Trans MOSFET P-CH 200V 2.2A 8-Pin PowerPAK SO SI7431DP-T1-E3; SI7431DP-T1-GE3;

Parameters

Open channel resistance:	180mOhm
Max. drain current:	2,2A
Max. power loss:	1,9W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	180mOhm
Max. drain current:	2,2A
Max. power loss:	1,9W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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