SI7469DP-T1-E3 VISHAY

Symbol Micros: TSI7469dp

200685

TSI7469dp

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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P-Channel MOSFET; 80V; 20V; 29mOhm; 10,2A; 5,2W; -55°C ~ 150°C;

Parameters

Open channel resistance:	29mOhm
Max. drain current:	10,2A
Max. power loss:	5,2W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	80V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	29mOhm
Max. drain current:	10,2A
Max. power loss:	5,2W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	80V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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