SI7617DN-T1-GE3 Vishay

Symbol Micros: TSI7617dn

105798

TSI7617dn

Contractor Symbol:

Case : PPAK1212

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 35A 12.3mΩ 52W

Parameters

Open channel resistance:	22,2mOhm
Max. drain current:	35A
Max. power loss:	52W
Case:	PPAK1212
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI7617DN-T1-GE3 Case style: PPAK1212  

External warehouse:

48000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4260

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Vishay Manufacturer part number: SI7617DN-T1-GE3 Case style: PPAK1212  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3450

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	22,2mOhm
Max. drain current:	35A
Max. power loss:	52W
Case:	PPAK1212
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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