SI7617DN-T1-GE3 Vishay

Symbol Micros: TSI7617dn

105798

TSI7617dn

Contractor Symbol:

Case : PPAK1212

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 35A 12.3mΩ 52W

Parameters

Open channel resistance:	22,2mOhm
Max. drain current:	35A
Max. power loss:	52W
Case:	PPAK1212
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	22,2mOhm
Max. drain current:	35A
Max. power loss:	52W
Case:	PPAK1212
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.