SI7850DP-T1-E3 VISHAY

Symbol Micros: TSI7850dp

200720

TSI7850dp

Contractor Symbol:

Case : PPAK

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Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP

Parameters

Open channel resistance:	31mOhm
Max. drain current:	6,2A
Max. power loss:	1,8W
Case:	PowerPAK SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	31mOhm
Max. drain current:	6,2A
Max. power loss:	1,8W
Case:	PowerPAK SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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