SIHG20N50C-E3

Symbol Micros: TSIHG20n50c

230530

TSIHG20n50c

Contractor Symbol:

Case : TO247

Datasheet

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Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT

Parameters

Open channel resistance:	270mOhm
Max. drain current:	20A
Max. power loss:	250W
Case:	TO247
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: Vishay Manufacturer part number: SIHG20N50C-E3 RoHS Case style: TO247 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	25+	100+	300+
Net price (EUR)	2,3852	1,8932	1,6927	1,6198	1,5902

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Packaging:
25/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	270mOhm
Max. drain current:	20A
Max. power loss:	250W
Case:	TO247
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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