SIHK045N60E-T1-GE3 Vishay Siliconix

Symbol Micros: TSIHK045N60E-T1-GE3
Contractor Symbol:
Case : PPAK-SO8
Transistor N-Channel MOSFET; 600V; +/-30V; 49mOhm; 48A; 278W; -55°C~150°C;
Parameters
Open channel resistance: 49mOhm
Max. drain current: 48A
Max. power loss: 278W
Case: PPAK-SO8
Manufacturer: Siliconix
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: SIHK045N60E-T1-GE3 RoHS Case style: PPAK-SO8 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 5,8218 5,3637 5,0818 4,9384 4,8515
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Packaging:
10
Open channel resistance: 49mOhm
Max. drain current: 48A
Max. power loss: 278W
Case: PPAK-SO8
Manufacturer: Siliconix
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD