SIHK045N60E-T1-GE3 Vishay Siliconix
Symbol Micros:
TSIHK045N60E-T1-GE3
Case : PPAK-SO8
Transistor N-Channel MOSFET; 600V; +/-30V; 49mOhm; 48A; 278W; -55°C~150°C;
Parameters
Open channel resistance: | 49mOhm |
Max. drain current: | 48A |
Max. power loss: | 278W |
Case: | PPAK-SO8 |
Manufacturer: | Siliconix |
Max. drain-source voltage: | 600V |
Transistor type: | N-MOSFET |
Open channel resistance: | 49mOhm |
Max. drain current: | 48A |
Max. power loss: | 278W |
Case: | PPAK-SO8 |
Manufacturer: | Siliconix |
Max. drain-source voltage: | 600V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 30V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols