SIHK045N60E-T1-GE3 Vishay Siliconix

Symbol Micros: TSIHK045N60E-T1-GE3

395488

TSIHK045N60E-T1-GE3

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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Transistor N-Channel MOSFET; 600V; +/-30V; 49mOhm; 48A; 278W; -55°C~150°C;

Parameters

Open channel resistance:	49mOhm
Max. drain current:	48A
Max. power loss:	278W
Case:	PPAK-SO8
Manufacturer:	Siliconix
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SIHK045N60E-T1-GE3 RoHS Case style: PPAK-SO8 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	5,8329	5,3739	5,0914	4,9479	4,8608

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Packaging:
10 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: SIHK045N60E-T1-GE3 Case style: PPAK-SO8  

External warehouse:

2000 pcs.

Quantity of pcs.	2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	4,8608

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Packaging:
2000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	49mOhm
Max. drain current:	48A
Max. power loss:	278W
Case:	PPAK-SO8
Manufacturer:	Siliconix
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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