SIHP12N60E-E3 Vishay

Symbol Micros: TSIHP12n60e

248403

TSIHP12n60e

Contractor Symbol:

Case : TO220

Datasheet

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Transistors N-Channel MOSFET; 600V; 30V; 380mOhm; 12A; 147W; -55°C ~ 150°C; Substitute: SIHP12N60E-GE3;

Parameters

Open channel resistance:	380mOhm
Max. drain current:	12A
Max. power loss:	147W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Max. drain-gate voltage:	30V

All parameters

Manufacturer:: Vishay Manufacturer part number: SIHP12N60E-GE3 Case style: TO220  

External warehouse:

700 pcs.

Quantity of pcs.	350+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,1088

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	380mOhm
Max. drain current:	12A
Max. power loss:	147W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Max. drain-gate voltage:	30V
Transistor type:	MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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