SIR186DP-T1-RE3 Vishay Siliconix

Symbol Micros: TSIR186dp

257345

TSIR186dp

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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MOSFET N-CH 60V 60A POWERPAKSO-8

Parameters

Open channel resistance:	7,8mOhm
Max. drain current:	23A
Max. power loss:	5W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SIR186DP-T1-RE3 Case style: PPAK-SO8  

External warehouse:

6000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5013

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	7,8mOhm
Max. drain current:	23A
Max. power loss:	5W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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