SIR426DP-T1-GE3 Vishay Siliconix

Symbol Micros: TSIR426dp

257357

TSIR426dp

Contractor Symbol:

Case : PPAK

Datasheet

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MOSFET N-CH 40V 30A PPAK SO-8

Parameters

Open channel resistance:	12,5mOhm
Max. drain current:	30A
Max. power loss:	41,7W
Case:	PowerPAK SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Siliconix Manufacturer part number: SIR426DP-T1-GE3 RoHS Case style: SOP08t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	30+	200+	400+
Net price (EUR)	1,2348	0,8634	0,7131	0,6584	0,6493

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Packaging:
200 Quantity (multiple: 1)

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Manufacturer:: Vishay Manufacturer part number: SIR426DP-T1-GE3 Case style: PPAK  

External warehouse:

50 pcs.

Quantity of pcs.	25+ (Please wait for the order confirmation)
Net price (EUR)	1,1717

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Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	12,5mOhm
Max. drain current:	30A
Max. power loss:	41,7W
Case:	PowerPAK SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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