SIR638DP-T1-GE3 Vishay Siliconix

Symbol Micros: TSIR638dp

257377

TSIR638dp

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Datasheet

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Transistor N-Channel MOSFET; 40V; 20V; 1,16mOhm; 100A; 104W; -55°C ~ 150°C;

Parameters

Open channel resistance:	0,00116Ohm
Max. drain current:	100A
Max. power loss:	104W
Case:	PowerPAK SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	0,00116Ohm
Max. drain current:	100A
Max. power loss:	104W
Case:	PowerPAK SO-8
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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