SIR880BDP-T1-RE3

Symbol Micros: TSIR880BDP

530306

TSIR880BDP

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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Transistor N-Channel MOSFET; 80V; 20V; 8mOhm; 70,6A; 71,4W; -55°C ~ 150°C;

Parameters

Open channel resistance:	8mOhm
Max. drain current:	70,6A
Max. power loss:	71,4W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	80V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	8mOhm
Max. drain current:	70,6A
Max. power loss:	71,4W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	80V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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