SIR882BDP-T1-RE3 

Symbol Micros: TSIR882BDP-T1-RE3

395582

TSIR882BDP-T1-RE3

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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N-CHANNEL 100V (D-S) MOSFET POWE Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	6,9mOhm
Max. drain current:	67,5A
Max. power loss:	83,3W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	6,9mOhm
Max. drain current:	67,5A
Max. power loss:	83,3W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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