SIRA06DP-T1-GE3 Vishay Siliconix

Symbol Micros: TSIRA06dp

257420

TSIRA06dp

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Datasheet

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MOSFET N-CH 30V 40A PPAK SO-8

Parameters

Open channel resistance:	3,5mOhm
Max. drain current:	33,3A
Max. power loss:	5W
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	3,5mOhm
Max. drain current:	33,3A
Max. power loss:	5W
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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