SIRA10BDP-T1-GE3 Vishay Siliconix

Symbol Micros: TSIRA10bdp
Contractor Symbol:
Case : PPAK-SO8
MOSFET N-CHAN 30V
Parameters
Open channel resistance: 5mOhm
Max. drain current: 30A
Max. power loss: 5W
Case: PPAK-SO8
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 5mOhm
Max. drain current: 30A
Max. power loss: 5W
Case: PPAK-SO8
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD