SIRA10BDP-T1-GE3 Vishay Siliconix

Symbol Micros: TSIRA10bdp

257421

TSIRA10bdp

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Case : PPAK-SO8

Datasheet

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MOSFET N-CHAN 30V

Parameters

Open channel resistance:	5mOhm
Max. drain current:	30A
Max. power loss:	5W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	5mOhm
Max. drain current:	30A
Max. power loss:	5W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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