SIRA90DP

Symbol Micros: TSIRA90dp
Contractor Symbol:
Case : PowerSO08
MOSFET N-CH 30V 65,8A POWERPAKSO SIRA90DP-T1-GE3;
Parameters
Open channel resistance: 1,15mOhm
Max. drain current: 65,8A
Max. power loss: 6,25W
Case: PowerSO08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 1,15mOhm
Max. drain current: 65,8A
Max. power loss: 6,25W
Case: PowerSO08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD