SIRA90DP

Symbol Micros: TSIRA90dp
Contractor Symbol:
Case : PowerSO08
MOSFET N-CH 30V 65,8A POWERPAKSO SIRA90DP-T1-GE3;
Parameters
Open channel resistance: 1,15mOhm
Max. drain current: 65,8A
Max. power loss: 6,25W
Case: PowerSO08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: SIRA90DP-T1-GE3 Case style: PowerSO08  
External warehouse:
6000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4354
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 1,15mOhm
Max. drain current: 65,8A
Max. power loss: 6,25W
Case: PowerSO08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD