SIRA90DP

Symbol Micros: TSIRA90dp

257453

TSIRA90dp

Contractor Symbol:

Case : PowerSO08

Datasheet

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MOSFET N-CH 30V 65,8A POWERPAKSO SIRA90DP-T1-GE3;

Parameters

Open channel resistance:	1,15mOhm
Max. drain current:	65,8A
Max. power loss:	6,25W
Case:	PowerSO08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SIRA90DP-T1-GE3 Case style: PowerSO08  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5118

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,15mOhm
Max. drain current:	65,8A
Max. power loss:	6,25W
Case:	PowerSO08
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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