SISH110DN-T1-GE3 Vishay Siliconix

Symbol Micros: TSISH110dn

257480

TSISH110dn

Contractor Symbol:

Case : PPAK1212

Datasheet

Technical drawing Add to favourites

N-Channel MOSFET; 20V; 20V; 7,8mOhm; 13,5A; 1,5W; -55°C ~ 150°C;

Parameters

Open channel resistance:	7,8mOhm
Max. drain current:	13,5A
Max. power loss:	1,5W
Case:	PPAK1212
Manufacturer:	Vishay
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SISH110DN-T1-GE3 RoHS Case style: PPAK1212  

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,3034	0,9131	0,7759	0,7097	0,6860

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Packaging:
650 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	7,8mOhm
Max. drain current:	13,5A
Max. power loss:	1,5W
Case:	PPAK1212
Manufacturer:	Vishay
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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