SISH615ADN-T1-GE3 Vishay Siliconix

Symbol Micros: TSISH615adn

257490

TSISH615adn

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Datasheet

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MOSFET P-CHAN 20 V POWERPAK 1212

Parameters

Open channel resistance:	9,8mOhm
Max. drain current:	22,1A
Max. power loss:	3,7W
Case:	PPAK1212-8SH
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SISH615ADN-T1-GE3 Case style:    

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66000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2154

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	9,8mOhm
Max. drain current:	22,1A
Max. power loss:	3,7W
Case:	PPAK1212-8SH
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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