SISH625DN-T1-GE3 Vishay Siliconix

Symbol Micros: TSISH625dn

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TSISH625dn

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Case : PPAK1212

Datasheet

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MOSFET P-CHAN 30 V POWERPAK 1212

Parameters

Open channel resistance:	11mOhm
Max. drain current:	17,3A
Max. power loss:	3,7W
Case:	PPAK1212-8SH
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	11mOhm
Max. drain current:	17,3A
Max. power loss:	3,7W
Case:	PPAK1212-8SH
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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