SISH625DN-T1-GE3 Vishay Siliconix

Symbol Micros: TSISH625dn

257492

TSISH625dn

Contractor Symbol:

Case : PPAK1212

Datasheet

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MOSFET P-CHAN 30 V POWERPAK 1212

Parameters

Open channel resistance:	11mOhm
Max. drain current:	17,3A
Max. power loss:	3,7W
Case:	PPAK1212-8SH
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SISH625DN-T1-GE3 Case style: PPAK1212  

External warehouse:

6000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2613

Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Vishay Manufacturer part number: SISH625DN-T1-GE3 Case style: PPAK1212  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2752

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	11mOhm
Max. drain current:	17,3A
Max. power loss:	3,7W
Case:	PPAK1212-8SH
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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