SISS05DN-T1-GE3

Symbol Micros: TSISS05dn

310904

TSISS05dn

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Case : PPAK1212

Datasheet

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Trans MOSFET P-CH 30V 29.4A 8-Pin PowerPAK 1212-S EP

Parameters

Open channel resistance:	5,8mOhm
Max. drain current:	108A
Max. power loss:	65,7W
Case:	PPAK1212
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	5,8mOhm
Max. drain current:	108A
Max. power loss:	65,7W
Case:	PPAK1212
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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