SISS22DN-T1-GE3 Vishay Siliconix

Symbol Micros: TSISS22dn

257500

TSISS22dn

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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MOSFET N-CH 60V PPAK 1212-8S

Parameters

Open channel resistance:	5mOhm
Max. drain current:	90,6A
Max. power loss:	65,7W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Vishay Manufacturer part number: SISS22DN-T1-GE3 RoHS Case style: PPAK-SO8 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,8345	1,4519	1,2376	1,1362	1,0786

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5mOhm
Max. drain current:	90,6A
Max. power loss:	65,7W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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