SISS52DN-T1-GE3 

Symbol Micros: TSISS52DN-T1-GE3

395611

TSISS52DN-T1-GE3

Contractor Symbol:

Case : PPAK1212

Datasheet

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N-CHANNEL 30-V (D-S) MOSFET POWE Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	1,9mOhm
Max. power loss:	4,8W
Max. drain current:	47,1A
Case:	PPAK1212-8S
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SISS52DN-T1-GE3 Case style: PPAK1212  

External warehouse:

10 pcs.

Quantity of pcs.	1+ (Please wait for the order confirmation)
Net price (EUR)	0,4421

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	1,9mOhm
Max. power loss:	4,8W
Max. drain current:	47,1A
Case:	PPAK1212-8S
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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