SISS52DN-T1-GE3 

Symbol Micros: TSISS52DN-T1-GE3
Contractor Symbol:
Case : PPAK1212
N-CHANNEL 30-V (D-S) MOSFET POWE Transistors - FETs, MOSFETs - Single
Parameters
Open channel resistance: 1,9mOhm
Max. drain current: 47,1A
Max. power loss: 4,8W
Case: PPAK1212-8S
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 1,9mOhm
Max. drain current: 47,1A
Max. power loss: 4,8W
Case: PPAK1212-8S
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD