SISS92DN-T1-GE3 Vishay Siliconix

Symbol Micros: TSISS92dn

257521

TSISS92dn

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Case : PPAK1212

Datasheet

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MOSFET N-CH 250V POWERPAK 1212

Parameters

Open channel resistance:	190mOhm
Max. drain current:	3,4A
Max. power loss:	5,1W
Case:	PPAK1212-8S
Manufacturer:	VISHAY
Max. drain-source voltage:	250V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	3,4A
Max. power loss:	5,1W
Case:	PPAK1212-8S
Manufacturer:	VISHAY
Max. drain-source voltage:	250V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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